N, H and C-atoms Density in Flowing Afterglows of Microwave R/N2-H2 and R/N2-CH4 Discharges with R=N2, He, Ar and Applications to TiO2 Surface Nitriding

N, H and C-atoms Density in Flowing Afterglows of Microwave R/N2-H2 and R/N2-CH4 Discharges with R=N2, He, Ar and Applications to TiO2 Surface Nitriding

The density of N, H, and C atoms in microwave R/N2-H2 and R/N2-CH4 discharges with R=N2, He, and Ar has been calculated along the reduced pressure flowing afterglows. The density of H and C atoms, as well as other nitrogen active species such as N2(A), N2(X,v>13), N2+,NH, N(2D), CN, were calculated from the density of N atoms calibrated by NO titration in a variety of conditions using the method of band intensity ratios (between early and late afterglows). In addition, the density of O-atoms and NO molecules originating from air impurity was determined. It has been deduced the wall destruction probability of  H, O and C-atoms on the quartz afterglow tube: γHR,N2  = (1-3) 10-3 , γOR,N2  =(0.4-1) 10-3 and γCN2=(0.7) 10-3. The effects of H and C atoms on the inclusion of N-atoms in TiO2 surfaces have been studied.

Author (s) Details

A. Ricard
LAPLACE, Université de Toulouse, CNRS, INPT, UPS, 118 route de Narbonne, 31062 Toulouse cedex 9, France.

J. Amorim
Department Fisica, Inst. Tec. Aeronautica, CTA, Sao Jose de Campos 12228-900, Brazil.

M. Abdeladim
LMSE, Fac. Génie Electrique, USTO, El Mnaour-Oran, BP 1505, Bir El Djir, Algeria.

J. P. Sarrette
LAPLACE, Université de Toulouse, CNRS, INPT, UPS, 118 route de Narbonne, 31062 Toulouse cedex 9, France.

Y. K. Kim
Department of Energy Systems Research, Ajou University, Suwon 16499, Korea and Department of Chemistry, Ajou University, Suwon 16499, Korea.

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