Silicon carbide is an important non-oxide ceramic material used in wide range of industrial applications due to its exclusive properties such as high hardness and strength, chemical and thermal stability, high melting point, oxidation resistance, high erosion resistance, etc. All of these qualities make SiC a perfect candidate for various applications. A variety of processing techniques are tried to develop porous SiC ceramics starting from traditional Acheson method, which led largely into commercialization of silicon carbide. The fabrication of porous SiC ceramics by an oxidation bonding technique offers several advantages like good oxidation resistance because of air sintering of the ceramics, low sintering temperature, cost effectiveness and easy control over the porosity and other properties of the resultant ceramics. In this chapter, a brief summary is given on the effect of pore former, powder size, sintering temperature and sintering additives on the properties of the oxide bonded porous SiC ceramics with emphasis on mechanical properties, thermal shock resistance properties, gas permeability behavior and separation of particulate from off gas. This chapter has also enlightened the present use of oxide bonded porous SiC ceramics and discussed about the possible future scope in other application areas.