Intensity Noise Properties of Blue-violet Nitride Semiconductor Laser

Intensity Noise Properties of Blue-violet Nitride Semiconductor Laser

In this chapter, we present a research study on the noise properties of the blue-violet InGaN laser diode. The noise is described in terms of the spectral properties of the relative intensity noise (RIN). We examine the validity of the present noise modeling by comparing the simulated results with experimental measurements available in literature. We also compare the obtained noise results with those of AlGaAs lasers, which clarifies dependence of RIN on the emission wavelength. Also, we examine the influence of gain suppression on the quantum RIN. In additions, we examine the changes in the RIN level when describing the gain suppression by the case of inhomogeneous spectral broadening. The results show that RIN of the 410nm-InGaN laser is nearly 9 dB higher than that of the AlGaAs laser.


Author(s) Details

Moustafa Ahmed
Department of Physics, Faculty of Science, King Abdulaziz University, 80203 Jeddah 21589, Saudi Arabia and Department of Physics, Faculty of Science, Minia University, 61519 El-Minia, Egypt.

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